features z high current applications z complementary to ktc4375 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -30 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -1.5 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma, i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 -5 v collector cut-off current i cbo v cb =-30v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 a dc current gain h fe v ce =-2v, i c =-0.5a 100 320 collector-emitter saturation voltage v ce(sat) i c =-1.5a, i b =-30ma -2 v base-emitter voltage v be v ce =-2v, i c =-0.5a -1 v transition frequency f t v ce =-2v, i c =-500ma 120 mhz collector output capacitance c ob v cb =-10v, i e =0,f=1mhz 50 mhz classification of h fe rank o y range 100-200 160-320 sot-89 1. base 2. collector 3. emitter 1 2 3 transistor (pnp) KTA1663 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics KTA1663 2 date:2011/05 www.htsemi.com semiconductor jinyu
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